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NXP BC858W,115

NXP

BC858W,115


Transistors Bipolar - BJT TRANS GP TAPE-7

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$ 0.274

1933 1933 Items In Stock

Specification of BC858W,115

Package/Case SOT-323
Emitter- Base Voltage VEBO 5 V
DC Current Gain hFE Max 125 at 2 mA at 5 V
Minimum Operating Temperature - 65 C
Manufacturer Part No. BC858W,115
Brand NXP Semiconductors
Manufacturer NXP
Maximum Power Dissipation 200 mW
Part # Aliases BC858W T/R
Transistor Polarity PNP
Packaging Reel
Maximum Operating Temperature + 150 C
Product Category Transistors Bipolar - BJT
Maximum DC Collector Current 0.1 A
Collector- Emitter Voltage VCEO Max 30 V
Gain Bandwidth Product fT 100 MHz
Mounting Style SMD/SMT
Alternate Part No. 771-BC858W115
Configuration Single
DC Collector/Base Gain hFE Min 125 at 2 mA at 5 V
Collector- Base Voltage VCBO 30 V

More info

4. 2. 2002 - In data sheets and application notes which still contain NXP or Philips ... PNP general purpose transistors. BC856W; BC857W;. BC858W. [1]

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BC858W,135 Nexperia Bipolar Transistors - BJT TRANS GP TAPE-11 datasheet, inventory, & pricing. [3]

Buy NXP BC858W Bipolar - RF Transistor, PNP, -30 V, 100 MHz, 200 mW, -100 mA, 800 hFE now at Farnell element14. Same day dispatch for even the smallest ... [4]

BC858W datasheet, BC858W circuit, BC858W data sheet : NXP - PNP general purpose transistors ,alldatasheet, datasheet, Datasheet search site for Electronic ... [5]

References