NXP BUK6210-55C,118 View larger

NXP BUK6210-55C,118

NXP

BUK6210-55C,118


MOSFET N-CHAN 55V 78A

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$ 2.06

13 13 Items In Stock

Specification of BUK6210-55C,118

Configuration Single
Vds - Drain-Source Breakdown Voltage 55 V
Packaging Reel
Mounting Style SMD/SMT
Product Category MOSFET
Pd - Power Dissipation 128 W
Id - Continuous Drain Current 78 A
Minimum Operating Temperature - 55 C
Alternate Part No. 771-BUK621055C118
Brand NXP Semiconductors
Manufacturer Part No. BUK6210-55C,118
Package/Case DPAK-2
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 10 mOhms
Maximum Operating Temperature + 175 C
Manufacturer NXP
Vgs - Gate-Source Breakdown Voltage 20 V

More info

BUK6210-55C. N-channel TrenchMOS intermediate level FET. Rev. 2 — 4 October 2010. Product data sheet. Table 1. Quick reference data. Symbol. Parameter. [1]

References