NXP BUK6507-55C,127 View larger

NXP BUK6507-55C,127

NXP

BUK6507-55C,127


MOSFET N-CHAN 55V 100A

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$ 3.00

115 115 Items In Stock

Specification of BUK6507-55C,127

Configuration Single
Pd - Power Dissipation 158 W
Rds On - Drain-Source Resistance 7 mOhms
Id - Continuous Drain Current 100 A
Packaging Tube
Maximum Operating Temperature + 175 C
Manufacturer Part No. BUK6507-55C,127
Transistor Polarity N-Channel
Mounting Style Through Hole
Brand NXP Semiconductors
Alternate Part No. 771-BUK650755C127
Product Category MOSFET
Manufacturer NXP
Vgs - Gate-Source Breakdown Voltage 20 V
Vds - Drain-Source Breakdown Voltage 55 V
Package/Case TO-220-3
Minimum Operating Temperature - 55 C

More info

1.4 Quick reference data. BUK6507-55C. N-channel TrenchMOS logic and standard level FET. Rev. 01 — 12 October 2010. Product data sheet. Table 1. [1]

References