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NXP BUK753R1-40E,127

NXP

BUK753R1-40E,127


MOSFET N-channel TrenchMOS standard level FET

$ 3.92

246 246 Items In Stock

Specification of BUK753R1-40E,127

Pd - Power Dissipation 234 W
Qg - Gate Charge 20 nC
Configuration Single
Transistor Polarity N-Channel
Brand NXP Semiconductors
Vgs th - Gate-Source Threshold Voltage 3 V
Packaging Tube
Id - Continuous Drain Current 100 A
Alternate Part No. 771-BUK753R1-40E127
Rise Time 29 ns
Minimum Operating Temperature - 55 C
Mounting Style Through Hole
Maximum Operating Temperature + 175 C
Manufacturer NXP
Typical Turn-Off Delay Time 54 ns
Manufacturer Part No. BUK753R1-40E,127
Vds - Drain-Source Breakdown Voltage 40 V
Vgs - Gate-Source Breakdown Voltage 20 V
Fall Time 32 ns
Rds On - Drain-Source Resistance 2.6 mOhms
Product Category MOSFET
Package/Case TO-220-3
Channel Mode Enhancement