NXP BUK764R2-80E,118 View larger

NXP BUK764R2-80E,118

NXP

BUK764R2-80E,118


MOSFET N-channel TrenchMOS standard level FET

$ 4.58

263 263 Items In Stock

Specification of BUK764R2-80E,118

Vgs - Gate-Source Breakdown Voltage 20 V
Fall Time 53.2 ns
Configuration Single
Qg - Gate Charge 136 nC
Maximum Operating Temperature + 175 C
Mounting Style SMD/SMT
Packaging Reel
Vgs th - Gate-Source Threshold Voltage 3 V
Alternate Part No. 771-BUK764R2-80E118
Channel Mode Enhancement
Package/Case SOT-404-3
Manufacturer NXP
Product Category MOSFET
Manufacturer Part No. BUK764R2-80E,118
Id - Continuous Drain Current 120 A
Pd - Power Dissipation 324 W
Rise Time 45.5 ns
Transistor Polarity N-Channel
Brand NXP Semiconductors
Vds - Drain-Source Breakdown Voltage 80 V
Rds On - Drain-Source Resistance 3.1 mOhms
Typical Turn-Off Delay Time 80.9 ns
Minimum Operating Temperature - 55 C