NXP BUK7K5R6-30E,115 View larger

NXP BUK7K5R6-30E,115

NXP

BUK7K5R6-30E,115


MOSFET Dual N-channel 30 V 5.6 mo FET

$ 3.42

125 125 Items In Stock

Specification of BUK7K5R6-30E,115

Manufacturer Part No. BUK7K5R6-30E,115
Typical Turn-Off Delay Time 17.9 ns
Id - Continuous Drain Current 40 A
Vgs th - Gate-Source Threshold Voltage 3 V
Fall Time 12.9 ns
Pd - Power Dissipation 64 W
Vds - Drain-Source Breakdown Voltage 30 V
Alternate Part No. 771-BUK7K5R6-30E115
Packaging Reel
Maximum Operating Temperature + 175 C
Transistor Polarity N-Channel
Rise Time 10 ns
Configuration Dual
Channel Mode Enhancement
Brand NXP Semiconductors
Qg - Gate Charge 29.7 nC
Rds On - Drain-Source Resistance 4.76 mOhms
Mounting Style SMD/SMT
Minimum Operating Temperature - 55 C
Product Category MOSFET
Vgs - Gate-Source Breakdown Voltage 20 V
Package/Case SOT-1205-8
Manufacturer NXP