NXP BUK9Y12-100E,115 View larger

NXP BUK9Y12-100E,115

NXP

BUK9Y12-100E,115


MOSFET N-channel TrenchMOS logic level FET

$ 3.56

360 360 Items In Stock

Specification of BUK9Y12-100E,115

Vgs - Gate-Source Breakdown Voltage 15 V
Mounting Style SMD/SMT
Product Category MOSFET
Channel Mode Enhancement
Fall Time 74 ns
Maximum Operating Temperature + 175 C
Manufacturer NXP
Transistor Polarity N-Channel
Qg - Gate Charge 64 nC
Brand NXP Semiconductors
Configuration Single
Id - Continuous Drain Current 85 A
Pd - Power Dissipation 238 W
Rds On - Drain-Source Resistance 9.5 mOhms
Manufacturer Part No. BUK9Y12-100E,115
Alternate Part No. 771-BUK9Y12-100E115
Package/Case LFPAK-4
Minimum Operating Temperature - 55 C
Typical Turn-Off Delay Time 117 ns
Vds - Drain-Source Breakdown Voltage 100 V
Rise Time 39 ns
Vgs th - Gate-Source Threshold Voltage 1.7 V
Packaging Reel