NXP BUK9Y22-100E,115 View larger

NXP BUK9Y22-100E,115



MOSFET N-channel 100 V 22 mo FET

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$ 2.45

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Specification of BUK9Y22-100E,115

Vds - Drain-Source Breakdown Voltage 100 V
Manufacturer Part No. BUK9Y22-100E,115
Vgs - Gate-Source Breakdown Voltage 10 V
Rds On - Drain-Source Resistance 17.4 mOhms
Fall Time 31.1 ns
Packaging Reel
Alternate Part No. 771-BUK9Y22-100E115
Typical Turn-Off Delay Time 53.4 ns
Package/Case LFPAK56-4
Id - Continuous Drain Current 49 A
Rise Time 32.3 ns
Transistor Polarity N-Channel
Minimum Operating Temperature - 55 C
Manufacturer NXP
Maximum Operating Temperature + 175 C
Mounting Style SMD/SMT
Brand NXP Semiconductors
Qg - Gate Charge 35.8 nC
Configuration Triple Common Source
Product Category MOSFET
Pd - Power Dissipation 147 W
Vgs th - Gate-Source Threshold Voltage 1.7 V

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BUK9Y22-100E,115 Nexperia MOSFET N-channel 100 V 22 mo FET hoja de datos, inventario y precios. [1]

BUK9Y22-100E,115 Nexperia MOSFET N-channel 100 V 22 mo FET fiche technique, inventaire et tarifs. [2]

model: BUK9Y22-100E; mpn: BUK9Y22-100E,115; orderAcceptanceIndicator: Yes; productID: 9340 670 37115; Product status: Released For Supply; Product ... [3]

Order Nexperia USA Inc. BUK9Y22-100E,115 (1727-1495-1-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [4]