NXP BUK9Y7R2-60E,115 View larger

NXP BUK9Y7R2-60E,115

NXP

BUK9Y7R2-60E,115


MOSFET N-channel 60 V 7.2 mo FET

$ 2.23

188 188 Items In Stock

Specification of BUK9Y7R2-60E,115

Vds - Drain-Source Breakdown Voltage 60 V
Mounting Style SMD/SMT
Rds On - Drain-Source Resistance 5.4 mOhms
Rise Time 36.4 ns
Manufacturer NXP
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 167 W
Qg - Gate Charge 35 nC
Package/Case LFPAK-4
Typical Turn-Off Delay Time 49.4 ns
Vgs th - Gate-Source Threshold Voltage 1.7 V
Product Category MOSFET
Channel Mode Enhancement
Vgs - Gate-Source Breakdown Voltage 15 V
Alternate Part No. 771-BUK9Y7R2-60E115
Minimum Operating Temperature - 55 C
Fall Time 32.1 ns
Id - Continuous Drain Current 100 A
Manufacturer Part No. BUK9Y7R2-60E,115
Transistor Polarity N-Channel
Packaging Reel
Configuration Single
Brand NXP Semiconductors