NXP BUK9Y8R7-60E,115 View larger

NXP BUK9Y8R7-60E,115

NXP

BUK9Y8R7-60E,115


MOSFET N-channel 60 V 8.7 mo FET

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$ 2.38

239 239 Items In Stock

Specification of BUK9Y8R7-60E,115

Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage 15 V
Qg - Gate Charge 31 nC
Rise Time 30 ns
Package/Case LFPAK-4
Typical Turn-Off Delay Time 42 ns
Packaging Reel
Manufacturer Part No. BUK9Y8R7-60E,115
Configuration Single
Pd - Power Dissipation 147 W
Vgs th - Gate-Source Threshold Voltage 1.7 V
Brand NXP Semiconductors
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Alternate Part No. 771-BUK9Y8R7-60E115
Rds On - Drain-Source Resistance 6.8 mOhms
Product Category MOSFET
Id - Continuous Drain Current 86 A
Fall Time 26 ns
Manufacturer NXP
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 60 V
Channel Mode Enhancement

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