View larger

NXP PBSS5160U,115

NXP

PBSS5160U,115


Transistors Bipolar - BJT LO VCESAT(BISS)TRANS

More details


$ 0.71

2537 2537 Items In Stock

Specification of PBSS5160U,115

Collector- Emitter Voltage VCEO Max - 60 V
DC Current Gain hFE Max 200 at 1 mA at 5 V
Manufacturer Part No. PBSS5160U,115
Collector- Base Voltage VCBO 80 V
Brand NXP Semiconductors
Minimum Operating Temperature - 65 C
Alternate Part No. 771-PBSS5160U115
Gain Bandwidth Product fT 185 MHz
Continuous Collector Current - 700 mA
Emitter- Base Voltage VEBO - 5 V
Mounting Style SMD/SMT
Product Category Transistors Bipolar - BJT
DC Collector/Base Gain hFE Min 200
Maximum Power Dissipation 250 mW
Maximum DC Collector Current - 2 A
Part # Aliases PBSS5160U T/R
Packaging Reel
Package/Case SC-70
Configuration Single
Transistor Polarity PNP
Manufacturer NXP
Maximum Operating Temperature + 150 C

More info

2. 10. 2008 - 1.4 Quick reference data. [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS5160U. [1]

NXP PBSS5160U,115 Bipolar (BJT) Single Transistor, PNP, -60 V, 185 MHz, 415 mW, -1 A, 350 at Newark element14. Buy PBSS5160U,115 online from an ... [2]

PBSS5160U. 60 V, 1 A PNP low VCEsat (BISS) transistor. Favorite; Print. Overview; Parametrics; Package / Packing; Quality; Documentation; Ordering; Design ... [3]

References