NXP PBSS5260PAP,115 View larger

NXP PBSS5260PAP,115

NXP

PBSS5260PAP,115


Transistors Bipolar - BJT 60V 2A PNP/PNP lo VCEsat transistor

$ 1.21

1654 1654 Items In Stock

Specification of PBSS5260PAP,115

Collector- Base Voltage VCBO - 60 V
Manufacturer Part No. PBSS5260PAP,115
Manufacturer NXP
Maximum Power Dissipation 1450 mW
Maximum DC Collector Current - 3 A
Emitter- Base Voltage VEBO - 7 V
Product Category Transistors Bipolar - BJT
Brand NXP Semiconductors
Packaging Reel
Mounting Style SMD/SMT
Gain Bandwidth Product fT 100 MHz
Package/Case DFN2020-6
Continuous Collector Current - 2 A
Configuration Dual
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Collector- Emitter Voltage VCEO Max - 60 V
Transistor Polarity PNP
DC Current Gain hFE Max 250
DC Collector/Base Gain hFE Min 170
Alternate Part No. 771-PBSS5260PAP
Collector-Emitter Saturation Voltage - 100 mV