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NXP PMBT5551,215

NXP

PMBT5551,215


Transistors Bipolar - BJT NPN HV 300mA 160V

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$ 0.50

10002 10002 Items In Stock

Specification of PMBT5551,215

Minimum Operating Temperature - 65 C
Emitter- Base Voltage VEBO 6 V
Collector- Base Voltage VCBO 180 V
Brand NXP Semiconductors
Gain Bandwidth Product fT 300 MHz
Configuration Single
DC Current Gain hFE Max 80 at 1 mA at 5 V
Manufacturer NXP
Part # Aliases PMBT5551 T/R
Mounting Style SMD/SMT
Maximum DC Collector Current 0.3 A
Maximum Power Dissipation 250 mW
Collector- Emitter Voltage VCEO Max 160 V
Manufacturer Part No. PMBT5551,215
DC Collector/Base Gain hFE Min 80 at 1 mA at 5 V, 80 at 10 mA at 5 V, 30 at 50 mA at 5 V
Alternate Part No. 771-PMBT5551-T/R
Product Category Transistors Bipolar - BJT
Transistor Polarity NPN
Packaging Reel
Maximum Operating Temperature + 150 C
Package/Case SOT-23

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