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NXP PMPB11EN,115

NXP

PMPB11EN,115


MOSFET 30V N-channel Trench MOSFET

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$ 1.29

1380 1380 Items In Stock

Specification of PMPB11EN,115

Channel Mode Enhancement
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 13 A
Alternate Part No. 771-PMPB11EN,115
Transistor Polarity N-Channel
Pd - Power Dissipation 1.7 W
Manufacturer NXP
Ciss - Input Capacitance 840 pF
Manufacturer Part No. PMPB11EN,115
Fall Time 9 ns
Vgs th - Gate-Source Threshold Voltage 1.5 V
Package/Case SOT1220-6
Qg - Gate Charge 13.7 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Configuration Single
Mounting Style SMD/SMT
Rise Time 10 ns
Product Category MOSFET
Vgs - Gate-Source Breakdown Voltage 20 V
Packaging Reel
Brand NXP Semiconductors
Rds On - Drain-Source Resistance 14.5 mOhms

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PMPB11EN,115 NXP Semiconductors MOSFET 30V N-channel Trench MOSFET MOSFET Pricing and Availability. [1]

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NXP Semiconductors PMPB11EN,115, 6DFN-MD EP, Enhancement, 30 V, 9 A, Avnet Express, Same Day Ship, 4.5M+ parts online, Datasheets. [4]

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