NXP PSMN028-100YS,115 View larger

NXP PSMN028-100YS,115

NXP

PSMN028-100YS,115


MOSFET N-CHANNEL 100V STD LEVEL MOSFET

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$ 2.12

32 32 Items In Stock

Specification of PSMN028-100YS,115

Vgs th - Gate-Source Threshold Voltage 4.7 V
Vds - Drain-Source Breakdown Voltage 100 V
Mounting Style SMD/SMT
Package/Case LFPAK-4
Alternate Part No. 771-PSMN028-100YS115
Channel Mode Enhancement
Fall Time 12 ns
Pd - Power Dissipation 89 W
Transistor Polarity N-Channel
Configuration Single Triple Source
Maximum Operating Temperature + 175 C
Product Category MOSFET
Id - Continuous Drain Current 42 A
Minimum Operating Temperature - 55 C
Rise Time 14 ns
Vgs - Gate-Source Breakdown Voltage 20 V
Manufacturer Part No. PSMN028-100YS,115
Brand NXP Semiconductors
Typical Turn-Off Delay Time 33 ns
Packaging Reel
Rds On - Drain-Source Resistance 52 mOhms
Manufacturer NXP
Qg - Gate Charge 33 nC

More info

PSMN028-100YS - Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of ... [1]

PSMN028-100YS,115 Nexperia MOSFET N-CHANNEL 100V STD LEVEL MOSFET datasheet, inventory, & pricing. [2]

PSMN028-100YS. N-channel LFPAK 100V 27.5 mΩ standard level MOSFET. Rev. 02 — 30 March 2010. Product data sheet. 1. Product profile. 1.1 General ... [3]

Order Nexperia USA Inc. PSMN028-100YS,115 (1727-5226-1-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [4]

Create an effective common drain amplifier using this PSMN028-100YS,115 power MOSFET from NXP Semiconductors. Its maximum power dissipation is ... [5]

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