NXP PSMN1R1-30EL,127 View larger

NXP PSMN1R1-30EL,127

NXP

PSMN1R1-30EL,127


MOSFET N-Ch 30V 1.3 mOhms

$ 5.82

2850 2850 Items In Stock

Specification of PSMN1R1-30EL,127

Vgs th - Gate-Source Threshold Voltage 1.7 V
Alternate Part No. 771-PSMN1R130EL127
Pd - Power Dissipation 338 W
Qg - Gate Charge 243 nC
Id - Continuous Drain Current 120 A
Brand NXP Semiconductors
Maximum Operating Temperature + 175 C
Manufacturer NXP
Vgs - Gate-Source Breakdown Voltage 20 V
Mounting Style Through Hole
Product Category MOSFET
Transistor Polarity N-Channel
Manufacturer Part No. PSMN1R1-30EL,127
Packaging Tube
Vds - Drain-Source Breakdown Voltage 30 V
Package/Case I2PAK-3
Minimum Operating Temperature - 55 C
Rds On - Drain-Source Resistance 1.3 mOhms