NXP PSMN3R9-60PSQ View larger

NXP PSMN3R9-60PSQ

NXP

PSMN3R9-60PSQ


MOSFET N-channel 60 V 3.9 mo FET

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$ 4.53

282 282 Items In Stock

Specification of PSMN3R9-60PSQ

Vgs th - Gate-Source Threshold Voltage 3 V
Rds On - Drain-Source Resistance 2.94 mOhms
Product Category MOSFET
Minimum Operating Temperature - 55 C
Package/Case TO-220-3
Mounting Style Through Hole
Transistor Polarity N-Channel
Qg - Gate Charge 103 nC
Typical Turn-Off Delay Time 62.7 ns
Packaging Tube
Rise Time 41.4 ns
Brand NXP Semiconductors
Manufacturer Part No. PSMN3R9-60PSQ
Vgs - Gate-Source Breakdown Voltage 20 V
Configuration Single
Channel Mode Enhancement
Pd - Power Dissipation 263 W
Manufacturer NXP
Alternate Part No. 771-PSMN3R9-60PSQ
Maximum Operating Temperature + 175 C
Fall Time 45 ns
Id - Continuous Drain Current 130 A
Vds - Drain-Source Breakdown Voltage 60 V

More info

Find NXP Semiconductors PSMN3R9-60PSQ (568-10288-5-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [1]

PSMN3R9-60PSQ NXP Semiconductors MOSFET N-channel 60 V 3.9 mo FET MOSFET Pricing and Availability. [2]

PSMN3R9-60PSQ datasheet, cross reference, circuit and application notes in pdf format. [3]

PSMN3R9-60PS, N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78, Data ... PSMN3R9-60PS, 9340 674 64127, PSMN3R9-60PSQ, EU, Farnell Europe ... [4]

References